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Schottky Barrier Diodes for General Purpose Applications
Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace.
Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available
Maximum Ratings Junction Operating and Storage Temperature Range
1N5711, 1N5712, 5082-2800/10/11..... -65°C to +200°C
5082-2835 ..................................................... -60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at TCASE = 25°C)
Derate linearly to zero at maximum rated temp.
1N5711, 1N5712, 5082-2800/10/11.....................250 mW
5082-2835 .....................................................................150 mW
Peak Inverse Voltage ................................................................ VBR